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Crystal System
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Tetragona(4m): 13℃< T<132℃
a=3.99Å, c= 4.04Å (at 26℃)
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Density
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6.02 g/cm3
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Melt Point
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1612 ℃
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Growth Method
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TSSG (Top Seeded Solution Growth)
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Dielectric Constant
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ea=3700 ec=135(unclamped)
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ea=2400 ec=60 (clamped)
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Refractive Index
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515nm
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633nm
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800nm
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no
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2.4912
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2.4160
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2.3681
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ne
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2.4247
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2.3630
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2.3235
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Transmit Wavelengths
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0.43-6.30μm
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Photoelectric Coefficient
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rT13=8±2 pm/V rT33=105±10 pm/V rT42=1300±100 pm/V
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Reflectivity of SPPC (at 0 deg. cut）
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50 - 70 % for λ = 515 nm(Ce:BaTiO3)
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40 - 60 % (Pure BaTiO3) for λ = 515 nm
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50 - 80 % for λ = 633 nm(Ce:BaTiO3)
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40 - 60 % for λ = 633 nm (Pure BaTiO3)
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Two-wave Mixing Coupling Constant
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10 -40 cm-1
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Absorption Loss
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λ: 515nm
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λ: 633nm
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λ: 800nm
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α: 0.285 cm-1
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α: 0.108 cm-1
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α: 0.033 cm-1
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Orientation
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<100>,<001>,<110>,<111>, etc.
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Orientation Tolerance
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±0.5° or better
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Dimension
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10x10mm, 10x5mm, 5x5mm, etc.
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Dimension Tolerance
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±0.1 mm or better
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Thickness
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0.5mm, 1.0mm, etc.
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Thickness Tolerance
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±0.05 mm or better
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Surface Finish
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Single side polished (SSP)/Double sides polished (DSP)
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Surface Roughness
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Ra<10Å
Atomic Particle Microscopy (AFM) test report can be provided.
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Package
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Class 100 clean bag, Class 1000 super clean room
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Note:
The BTO substrates are poled, but with domains
BTO single crystal must be stored in temperature above 13 ℃ to avoid phase transition which will cause twin or domain inside crystal
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