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NIR Sensor LED & PD
NIR Sensor LED & PD
FOB Price
Korea (North)
Main Products : spo2, pulse oximetry, medical sensor
443,Woosuk University main bldg' gungdong-ro, Iksan-si, Jeollabuk-do
NIR Sensor LED & PD Details
Place of Origin
Korea
NIR Sensor LED & PD Introduce

■ FEATURES
- λp Typ : 1720nm
- NIR Emitter
- PCB / Transfer mold Type
- Clear Resin
■ APPLICATIONS
- Medical Sensor
- Physiotherapeutic instrument 
- Optical Communications

[ NIR LED ]

■ Absolute Maximum Ratings
PARAMETER Symbol Ratings Unit
 Forward Current(DC) IF Max. 100 mA
Peak Forward Current (tp≤50us, tp/T=½) IFM Max. 200 mA
 Operating Temperature Topr -20 ∼ +70
 Storage Temperature Tstg -30 ∼ +80
 Soldering Temperature Tsol 260
■ Electro - optical Characteristics
PARAMETER Symbol Condition Min Typ Max Unit
 Forward Voltage VF IF=20mA 0.7 V
 Forward Voltage VF IF=100mA 0.9 V
 Reverse Voltage VR IR=100uA 5 0.0 V
Radiant Power PO IF=20mA 0.8 Mw
Radiant Power PO IF=100mA 2.8 mW
 Peak Wavelength λp IF=20mA 1720 nm
 Spectral Bandwidth at 50% Δλ0.5 IF=20mA 100 nm
Switching Time tr, tf IF=20mA 10 ns

[ NIR PD ]

■ Absolute Maximum Ratings
PARAMETER Symbol Ratings Unit
 Forward Current - Max. 10 mA
 Reverse Voltage - Max. 20 V
 Reverse Current - Max. 2 mA
 Operating Temperature Topr -10 ∼ +60
 Storage Temperature Tstg -20 ∼ +70
 Soldering Temperature Tsol 250
■ Electro - optical Characteristics
PARAMETER Symbol Condition Min Typ Max Unit
Responsivity R VR=5V 0.8 0.95 A/W
Dark Current ID VR=5V 2 20.0
Breakdown Voltage BVR IR=10uA 20 35 V
Capacitance C VR=0V, f=1 MHz 100 200 pF
Spectrum Sensitivity λ - 800 1750 nm
Peak Sensing Wavelength λp - 1650 nm

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