Home
/
Categories
/
Electronic Components & Supplies
/
Active Components
/
Integrated Circuits
/
RF Transistor (SiGe / GaAs D-PHEMT / GaAs E-PHEMT)
RF Transistor (SiGe / GaAs D-PHEMT / GaAs E-PHEMT)
FOB Price
Taiwan
Main Products : wireless, RF, IC, Module, Zigbee, lighting, remote
3F-2, No. 192, Dongguang Rd., Hsinchu, 300 Taiwan Hsinchu, Hsinchu
RF Transistor (SiGe / GaAs D-PHEMT / GaAs E-PHEMT) Details
Place of Origin
Taiwan
Supply Type
In-Stock Items
Condition
New
Application
Satellite
Type
Transistor
RF Transistor (SiGe / GaAs D-PHEMT / GaAs E-PHEMT) Introduce

1. SiGe

The UA2700 NPN silicon RF transistor provides low noise and high gain amplification for

DVB-S, STB, GPS, LNA/Mixer/Oscillator.

*P/N:UA2700

*Vcc(V):1.8V~3.3V

*ICC(mA):1 ~ 30

*Current Gain(hFE):100~200

*Cutoff Freq.(fT):29GHz

*MAG @2GHz(dB):19.5

*NF@2GHz(dB):1.1

*Pout_1dB(dBm):13.5

*PKG.: 4-pin SOT343

2.GaAs D-PHEMT

Application: DVB-S LNB, 5G small cell LNA, GPS LNA, Microwave Motion Sensor

*P/N:UA2810 / UA2811

*VDD(V):1.2~3.3V

*IDD(mA):2 ~ 20

*VGS_OFF(V):-0.35

*fMAX (GHz):175

*fT (GHz):115

*GA @12GHz(dB):12.5

*NF@12GHz(dB):0.35

*Pout_1dB(dBm):5.5

*PKG.: die or SOT543

3.GaAs E-PHEMT

*P/N:UA2818

*VDD(V):1.5~5V

*IDD(mA):10 ~ 80

*VGS_OFF(V): 0

*GA @6GHz(dB):12.5

*NF@6GHz(dB):0.4

*Pout_1dB(dBm):20

*PKG.: SOT543

Previous : 40V Mosfet Driver IC Chip N-CH PSMN1R0-40YLDX 280A LFPAK56 Next : SQJ886EP-T1-BE3 Vishay
Copyright 2023-2024 - www.globalbiz8.com All Rights Reserved