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Silicon On Sapphire
Silicon On Sapphire
FOB Price 100 USD / Acre
MOQ
1 Acre
China
Main Products : Al2O3 substrate
No. 49, Jiefang East Road, Shanyang District, JIAOZUO 454000, HENAN, CHINA Jiaozuo, 河南
Silicon On Sapphire Details
Place of Origin
China
Supply Type
In-Stock Items
Condition
New
Silicon On Sapphire Introduce

manufacturer, CRYSCORE can provide standard or wafers with any orientation applied to epitaxy, as well as sapphire windows with any specifications applied to optics. Patterned sapphire substrates and sapphire ingots also can be provided. Expert in sapphire optics manufacturing.

A Brief Introduction of (SOS) technology is a hetero-epitaxial process for metal-oxide-semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 µm) of silicon grown on a SOS wafers part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used.

Silicon on Sapphire Technology

Due to sapphire has high permittivity that can eliminate the interaction between components of the integrated circuit, not only can reduce leakage current and parasitic capacitance, enhance radiation resistance and reduce power consumption but also can improve the level of integration and two-layer wiring, thus, sapphire is the ideal material for large scale and very large scale integrated circuit.

At present, sapphire crystal has become a widely used substrate for the growth of semiconductor materials.

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