| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | FETs - Single |
| Manufacturer | International Rectifier |
Product-Category  | MOSFET |
| RoHS | Details |
| Mounting-Style | Through Hole |
| Package-Case | TO-220-3 |
| Number-of-Channels | 1 Channel |
| Transistor-Polarity | N-Channel |
| Vds-Drain-Source-Breakdown-Voltage | 200 V |
| Id-Continuous-Drain-Current | 18 A |
| Rds-On-Drain-Source-Resistance | 150 mOhms |
| Vgs-Gate-Source-Voltage | 20 V |
| Qg-Gate-Charge | 44.7 nC |
| Maximum-Operating-Temperature | + 175 C |
| Technology | Si |
| Packaging | Tube |
| Channel-Mode | Enhancement |
| Brand | International Rectifier |
| Configuration | Single |
| Fall-Time | 5.5 ns |
| Forward-Transconductance-Min | 6.8 S |
| Minimum-Operating-Temperature | - 55 C |
| Pd-Power-Dissipation | 150 W |
| Rise-Time | 19 ns |
| Transistor-Type | 1 N-Channel |
| Typical-Turn-Off-Delay-Time | 23 ns |
| Typical-Turn-On-Delay-Time | 10 ns |
| Unit-Weight | 0.211644 oz |
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