ALD Atomic Layer Deposition
Applications
| Applications | Specific Purpose | ALD Material Type |
| MEMS devices | Etching barrier layer | Al2O3 |
| Protective layer | Al2O3 | |
| Anti-bonding layer | TiO2 | |
| Hydrophobic layer | Al2O3 | |
| Bonding layer | Al2O3 | |
| Wear-resistant layer | Al2O3, TiO2 | |
| Anti-short circuit layer | Al2O3 | |
| Charge dissipation layer | ZnO: Al | |
| Electroluminescent display | Luminous layer | ZnS: Mn / Er |
| Passivation layer | Al2O3 | |
| Storage materials | Ferroelectric materials | HfO2 |
| Paramagnetic materials | Gd2O3, Er2O3, Dy₂O₃, Ho2O3 | |
| Non-magnetic coupling | Ru, Ir | |
| Electrodes | Precious metals | |
| Inductive coupling (ICP) | High-k gate dielectric layer | HfO2, TiO2, Ta2O5, ZrO₂ |
| Crystalline silicon solar battery | Surface passivation | Al2O3 |
| Perovskite thin-film battery | Buffer Layer | ZnxMnyO |
| Transparent conducting layer | ZnO: Al | |
| 3D Packaging | Through-Silicon-Vias (TSVs) | Cu, Ru, TiN |
| Luminous application | OLED passivation layer | Al2O3 |
| Sensors | Passivation layer, filler materials | Al2O3, SiO2 |
| Medical Treatment | Biocompatible materials | Al2O3, TiO2 |
| Corrosion Protection layer | Surface corrosion protection layer | Al2O3 |
| Fuel battery | Catalyst | Pt, Pd, Rh |
| Lithium battery | Electrode material protection layer | Al2O3 |
| Hard disk read/write head | Passivation layer | Al2O3 |
| Decorative Coating | Colored film, metallized film | Al2O3, TiO2 |
| Anti-discoloration coating | Precious metal anti-oxidation coating | Al2O3, TiO2 |
| Optical films | High-low refractive index | MgF2, SiO2, ZnS, TiO2, Ta2O5, ZrO2, HfO2 |
Working Principle
Atomic layer deposition (ALD) is a method of depositing the substances on the surface of substrate in the form of
single atomic film layer by layer. Atomic layer deposition is similar to common chemical deposition, but in the process
of atomic layer deposition, the chemical reaction of a new layer of atomic film is directly associated with the previous
layer, so that only one layer of atoms is deposited in each reaction by this method.
Product Parameter
| Model | ALD1200-500 |
| Coating film system | AL2O3, TiO2, ZnO, etc |
| Coating temperature range | Normal temperature to 500℃ (Customizable) |
| Coating vacuum chamber size | Inner diameter: 1200mm, Height: 500mm (Customizable) |
| Vacuum chamber structure | According to customer’s requirements |
| Background vacuum | <5×10-7mbar |
| Coating thickness | ≥0.15nm |
| Thickness control precision | ±0.1nm |
| Coating size | 200×200mm² / 400×400mm² / 1200×1200 mm², etc |
| Film thickness uniformity | ≤±0.5% |
| Precursor and Carrier Gas | Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure water, nitrogen, etc. ( C₃H₉Al, TiCl4, C₄HZn,H2O,N₂, etc.) |
| Note: Customized production available. | |
Coating Samples
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking conditions are met.
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