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Water Process
FOB Price
Korea (North)
Main Products : FPD equipment, Semiconductor Equipment, Electronic Parts Equipment
397-4, Chupal-ri, Paengseong-eup, Pyeongtaek-si, Gyeonggi-do
Water Process Details
Model Number
VF-5900
Water Process Introduce

Vertical Furnace for 300 -mm Wafers

The VF-5900 furnace is a continuation of the VF-5300 model and has been developed to welcome the new age of 300-mm silicon wafers. The VF-5900 has a batch-processing system for the mass-handling of 300-mm wafers.

Summary

The VF-5900, designed to process 300-mm wafers, can accept a stack of 12 FOUPs (Front Opening Unified Pods) and can continuously process 2 batches, each of 100 wafers. All the FOUPs loaded into the I/O port are conveyed to the buffer shelves. After that, only the FOUPs that are required are conveyed to the internal door opener. The wafers are transported in a vacuum-less environment by a highly reliable twin-arm this word means Z-theta movement robot. Ladder-type boat designed to minimize slip is a standard feature. The VF-5900 furnace uses an LGO heating element, and has a forced-cooling system to increase throughput. As an optional feature, N2 load lock can be utilized to maximize the processing capacity.

Features

High processing capacity Up to 100 wafers can be continuously processed in 2 batches. Newly developed heating elements The furnace has heaters for low-temperature/low-temperature processes. N2 load lock The capacity of the VF-5900's N2 load lock chamber has been redesigned to enhance throughput. Ease of use Control is simplified by use of the Model 1400 controller which incorporates industry data requirements. (HSMS and GEM compatible.) Maintenance The removable FOUP buffer allows easier maintenance. Footprint Only the main unit of the VF-5900 is set up in the clean room; the supporting systems can all be installed under the floor to significantly reduce the overall footprint.

Specification

Model VF-5900
Wafer size 300mm
Outside dimension(mm) W1200 x D2750 x H3350
Batch size 100
Continual treatment 2 batch
Heater LGO heater
Service temperature 300 - 1050deg.-c
Flat zone(mm) 1060
Temperature control 4zone
Cassette stock 12
Process cassette 8
Dummy cassette 2
Monitor cassette 2
Wafer transfer vacuumless
Finger 5+1
Controller Model 1400
Applicable to SECS possible
Applicable to AGV possible
Applicable to SMIF/FOUP possible

A Summary of Process Performance

  Pyro.Ox Thick
film
Pyro.Ox Thin
film
P-D-Poly Poly-Si HTO Si3N4 TEOS
Reaction gas O2.H2 O2.H2 SiH4.PH3.H2 SiH4 SiH2Cl2.N2O SiH2Cl2.NH3 Si(C2H5O)4.O2
Growth temp.(deg.-c) 1000 - 1250 800 - 1000 550 - 600 600 - 620 870 - 890 770 - 800 - 750
Growth rate(A/min) - - 12 - 20 60 - 100 40 - 50 20 - 50 - 100
Number of wafer(sheet) 150 150 25 100 100 100 100/50
Thickness
variation(%)
Inside wafer 2 2 3 2 3 3 4 3
Between wafers 2 2 2 2 3 2 3 2
Between batches 2 2 2 1 2 2 2 2

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